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| NTE2981 Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS(on) Specified at VGS = 4V & 5V Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.9A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33W/C Total Power Dissipation (PC Board Mount, TC = +25C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . 2.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.02W/C Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2mJ Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +260C Maximum Thermal Resistance: Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0C/W Junction-to-Ambient (PCB Mount, Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110C/W Note Note Note Note 1. 2. 3. 4. Repetitive Rating: Pulse width limited by maximum junction temperature. When mounted on a 1" square PCB (FR-4 or G-10 material). L = 5.3mH, VDD = 25V, RG = 25, Starting TJ = +25C, IAS = 7.7A. ISD 9.2A, di/dt 110A/s, VDD V(BR)DSS, TJ +150C. Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source ON Resistance Symbol BVDSS Test Conditions VGS = 0V, ID = 250A Min 100 Typ - 0.13 - - - - - - - - - - - 9.8 64 21 27 4.5 7.5 490 150 30 Max - Unit V V(BR)DSS/ Reference to +25C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss IS ISM VSD trr Qrr ton (Body Diode) (Body Diode) Note 1 TJ = +25C, IS = 7.7A, VGS = 0V, Note 5 TJ = +25C, IF = 9.2A, di/dt = 100A/s, Note 5 Between lead, 6mm (0.25") from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz VDD = 50V, ID = 9.2A, RG = 9.0, RD = 5.2, Note 5 VGS = 5V, ID = 4.6A, Note 5 VGS = 4V, ID = 3.9A, Note 4 VDS = VGS, ID = 250A VDS = 50V, ID = 4.6A, Note 5 VDS = 100V, VGS = 0 VDS = 80V, VGS = 0V, TC = +125C VGS = 10V VGS = -10V VGS = 5V, ID = 9.2A, VDS = 80V, Note 5 - - - 1.0 4.4 - - - - - - - - - - - - - - - - - 0.27 0.38 2.0 - 25 250 100 -100 12 3.0 7.1 - - - - - - - - - V/C V mhos A A nA nA nC nC nC ns ns ns ns nH nH pF pF pF Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-Source Leakage Forward Gate-Source Leakage Reverse Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time - - - - - - - - 110 0.8 7.7 31 2.5 140 1.0 A A V ns C Intrinsic turn-on time is neglegible (turn-on is dominated by LS + LD) Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 5. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .256 (6.5) .197 (5.0) .059 (1.5) .090 (2.3) .002 (0.5) .275 (7.0) G D S .295 (7.5) .002 (0.5) .090 (2.3) |
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